RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Essencore Limited IM48GU88N26-FFFHMZ 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Essencore Limited IM48GU88N26-FFFHMZ 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
62
左右 61% 更低的延时
更快的写入速度,GB/s
12.5
8.7
测试中的平均数值
需要考虑的原因
Essencore Limited IM48GU88N26-FFFHMZ 8GB
报告一个错误
更快的读取速度,GB/s
17.4
16
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
62
读取速度,GB/s
16.0
17.4
写入速度,GB/s
12.5
8.7
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2086
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Essencore Limited IM48GU88N26-FFFHMZ 8GB RAM的比较
Corsair CMK64GX4M4K3733C17 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R5S38G1601U2S 8GB
G Skill Intl F4-4133C19-8GTZKW 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CMK16GX4M2A2400C16 8GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-3333C16-8GTZ 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT4G4SFS8213.C8FBR2 4GB
G Skill Intl F3-1600C11-8GIS 8GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
Micron Technology 18HTF12872AY-800F1 1GB
Wilk Elektronik S.A. GY2133D464L15S/8G 8GB
Nanya Technology NT4GC64C88B1NS-DI 4GB
Samsung M386A2G40DB0-CPB 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Samsung M386A4G40DM1-CRC 32GB
Corsair CML8GX3M2A1600C9 4GB
Essencore Limited IM48GU88A30-FGGHMZ 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Smart Modular SF4641G8CK8I8HLSBG 8GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Micron Technology 72ASS8G72LZ-2G3B2 64GB
Corsair CM2X1024-8500C5D 1GB
Chun Well Technology Holding Limited MD4U0840180BCW 8GB
Samsung M395T5160QZ4-CE66 2GB
Crucial Technology CT8G4DFRA266.M4FE 8GB
报告一个错误
×
Bug description
Source link