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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C15-4GVR 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2400C15-4GVR 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-2400C15-4GVR 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
33
左右 27% 更低的延时
更快的写入速度,GB/s
12.5
11.7
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-2400C15-4GVR 4GB
报告一个错误
更快的读取速度,GB/s
16.1
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-2400C15-4GVR 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
33
读取速度,GB/s
16.0
16.1
写入速度,GB/s
12.5
11.7
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2702
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-2400C15-4GVR 4GB RAM的比较
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-2400C15-4GVR 4GB
Kingston 9965525-018.A00LF 4GB
Kingston 9905678-139.A00G 8GB
Kingston 99U5469-045.A00LF 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
SK Hynix HMT325S6CFR8C-H9 2GB
Smart Modular SF464128CK8I6GKSEG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology CT16G4SFS8266.C8FE 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Crucial Technology BLS4G4D26BFSE.8FBD2 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Corsair CMU64GX4M4D3000C16 16GB
AMD R538G1601U2S 8GB
G Skill Intl F4-3400C16-16GTZ 16GB
Samsung M471A1G44AB0-CWE 8GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
AMD R5316G1609U2K 8GB
Crucial Technology BLS16G4D30AESE.M16FE 16GB
Kingston 99U5403-036.A00G 4GB
G Skill Intl F4-4600C19-8GTZSWC 8GB
Samsung M378B5273CH0-CH9 4GB
Micron Technology 8ATF1G64HZ-2G6E3 8GB
Samsung M393B1G70BH0-YK0 8GB
Crucial Technology CT16G4DFRA266.C8FE 16GB
Samsung M471B5273CH0-CH9 4GB
Samsung M378A2K43CB1-CTD 16GB
报告一个错误
×
Bug description
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