Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2400C17-4GFX 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2400C17-4GFX 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-2400C17-4GFX 4GB

G Skill Intl F4-2400C17-4GFX 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 73

左右 67% 更低的延时
更快的读取速度，GB/s

16 13.4

测试中的平均数值
更快的写入速度，GB/s

12.5 7.0

测试中的平均数值

G Skill Intl F4-2400C17-4GFX 4GB

需要考虑的原因
G Skill Intl F4-2400C17-4GFX 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2400C17-4GFX 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 73
读取速度，GB/s

16.0 13.4
写入速度，GB/s

12.5 7.0
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 1468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

Kingston 9905744-024.A00G 16GB

Kingston 9905744-024.A00G 16GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Samsung M471A5143EB0-CPB 4GB

Samsung M471A5143EB0-CPB 4GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F4-4133C19-8GTZSWF 8GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Samsung M471A5143DB0-CPB 4GB

Samsung M471A5143DB0-CPB 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Kingmax Semiconductor GLLG42F-D8KFGA------ 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3000C16-8GSXWB 8GB

G Skill Intl F4-3000C16-8GSXWB 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Corsair CMK8GX4M1A2666C16 8GB

Corsair CMK8GX4M1A2666C16 8GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Transcend Information TS512MLH64V4H 4GB

Transcend Information TS512MLH64V4H 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Mushkin MR[ABC]4U320GJJM16G 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Corsair CMSO16GX4M1A2133C15 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Micron Technology 18ASF1G72PDZ-2G6B1 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BLS8G3N18AES4.16FE 8GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB

Crucial Technology BL16G30C15U4R.M16FE1 16GB