Ramos Technology RMB4GB58BCA3-13HC 4GB vs G Skill Intl F4-3600C17-4GVK 4GB

总分

Ramos Technology RMB4GB58BCA3-13HC 4GB

Ramos Technology RMB4GB58BCA3-13HC 4GB

总分

G Skill Intl F4-3600C17-4GVK 4GB

G Skill Intl F4-3600C17-4GVK 4GB

差异规格评论

差异

Ramos Technology RMB4GB58BCA3-13HC 4GB

需要考虑的原因
Ramos Technology RMB4GB58BCA3-13HC 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 34

左右 32% 更低的延时

G Skill Intl F4-3600C17-4GVK 4GB

需要考虑的原因
G Skill Intl F4-3600C17-4GVK 4GB

报告一个错误

更快的读取速度，GB/s

14.8 11.6

测试中的平均数值
更快的写入速度，GB/s

11.5 5.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Ramos Technology RMB4GB58BCA3-13HC 4GB

G Skill Intl F4-3600C17-4GVK 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

23 34
读取速度，GB/s

11.6 14.8
写入速度，GB/s

5.6 11.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1751 2588

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston KHX3200C16D4/4GX 4GB

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Kllisre KRE-D3U1600M/8G 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 99U5584-004.A00LF 4GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology BLS8G4D26BFSE.16FB 8GB

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Kingston 9905630-066.A00G 16GB

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Kingmax Semiconductor FLFF65F-C8KM9 4GB

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G Skill Intl F4-3200C16-16GTZRX 16GB

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Kingston KHX2133C15S4/8G 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

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Kingston 99U5471-012.A00LF 4GB

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Corsair CMD16GX4M4B2400C10 4GB

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Kingston KVR800D2N6/2G 2GB

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MemxPro Inc. D4S8GHIOFFC 8GB