Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2666C16-4GRB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-2666C16-4GRB 4GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 38

左右 37% 更低的延时
更快的读取速度，GB/s

16 12.9

测试中的平均数值
更快的写入速度，GB/s

12.5 10.1

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-2666C16-4GRB 4GB

需要考虑的原因
G Skill Intl F4-2666C16-4GRB 4GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

G Skill Intl F4-2666C16-4GRB 4GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 38
读取速度，GB/s

16.0 12.9
写入速度，GB/s

12.5 10.1
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2925 2690

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2666C16-4GRB 4GB

G Skill Intl F4-2666C16-4GRB 4GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Mushkin 99[2/7/4]191F 4GB

Mushkin 99[2/7/4]191F 4GB

Kingston 9905403-156.A00LF 2GB

Kingston 9905403-156.A00LF 2GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

G Skill Intl F4-3600C14-8GTRSB 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

G Skill Intl F4-3200C16-16GTZA 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston 9905622-058.A00G 8GB

Kingston 9905622-058.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston RB26D4U9D8MEH-16 16GB

Kingston RB26D4U9D8MEH-16 16GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

Crucial Technology BLT8G4D26AFTA.16FAD 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Samsung M471A2K43BB1-CRC 16GB

Samsung M471A2K43BB1-CRC 16GB

AMD R534G1601U1S-UO 4GB

AMD R534G1601U1S-UO 4GB

Corsair CM4X8GE2400C14K4 8GB

Corsair CM4X8GE2400C14K4 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX2666C16D4/4G 4GB

Kingston KHX2666C16D4/4G 4GB

Kingston KHX16LC9/8GX 8GB

Kingston KHX16LC9/8GX 8GB

Samsung M378A1G43EB1-CPB 8GB

Samsung M378A1G43EB1-CPB 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Samsung M378A5244CB0-CWE 4GB

Samsung M378A5244CB0-CWE 4GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Kingmax Semiconductor KLDE88F-B8MO5 2GB

Transcend Information TS1GLH64V4B 8GB

Transcend Information TS1GLH64V4B 8GB