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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-8GTZKW 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3200C14-8GTZKW 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3200C14-8GTZKW 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
25
左右 4% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3200C14-8GTZKW 8GB
报告一个错误
更快的读取速度,GB/s
19.2
16
测试中的平均数值
更快的写入速度,GB/s
15.7
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3200C14-8GTZKW 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
25
读取速度,GB/s
16.0
19.2
写入速度,GB/s
12.5
15.7
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3680
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3200C14-8GTZKW 8GB RAM的比较
Kingston 9965525-155.A00LF 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Crucial Technology CT8G4DFRA266.C8FP 8GB
Corsair CML16GX3M2A1600C10 8GB
G Skill Intl F4-3200C16-8GTZRN 8GB
SK Hynix HMT42GR7AFR4C-RD 16GB
Crucial Technology CT16G4DFD824A.C16FJ 16GB
SK Hynix HMT325U6CFR8C-PB 2GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Golden Empire 1GB DDR2 800 CAS=4 1GB
Aquarius Production Company LLC 16G-D4-2666-MR 4GB
Kingston 9905471-006.A01LF 4GB
Crucial Technology CT16G4SFD8213.C16FH1 16GB
Kingston 9905403-156.A00LF 2GB
SK Hynix HMA851U6AFR6N-UH 4GB
Samsung M471B5273EB0-CK0 4GB
Corsair CMK16GX4M2Z3600C18 8GB
SK Hynix DDR2 800 2G 2GB
Micron Technology 16GB 2133MHz DIMM 16GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-2800C16-8GRR 8GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Crucial Technology BLS8G3N169ES4.16FE 8GB
Micron Technology 9ASF51272AZ-2G3B1 4GB
Samsung 1600 CL10 Series 8GB
A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Essencore Limited KD48GU88C-26N1600 8GB
报告一个错误
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Bug description
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