RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C19-16GSXWB 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3600C19-16GSXWB 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C19-16GSXWB 16GB
报告一个错误
更快的读取速度,GB/s
17.3
16
测试中的平均数值
更快的写入速度,GB/s
14.8
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
17.3
写入速度,GB/s
12.5
14.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3544
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C19-16GSXWB 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3600C19-16GSXWB 16GB
SK Hynix HMT325S6BFR8C-H9 2GB
Essencore Limited IM48GS88N26-JJJHA0 8GB
TwinMOS 8DPT5MK8-TATP 2GB
Wilk Elektronik S.A. IRX3000D464L16S/8G 8GB
A-DATA Technology AD73I1C1674EV 4GB
Micron Technology 16ATF4G64AZ-3G2E1 32GB
Samsung M471B5173QH0-YK0 4GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology BLS4G4D240FSB.8FADG 4GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston KHX3200C18D4/4G 4GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Kingston MSI24D4S7D8MB-16 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMK32GX4M2Z3200C16 16GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
G Skill Intl F4-3000C14-16GVKD 16GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M471A1K43DB1-CTD 8GB
Kingston ACR512X64D3S13C9G 4GB
Kingston 9965604-033.D00G 16GB
报告一个错误
×
Bug description
Source link