RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs G Skill Intl F4-3600C19-16GSXWB 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
G Skill Intl F4-3600C19-16GSXWB 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
30
左右 20% 更低的延时
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
G Skill Intl F4-3600C19-16GSXWB 16GB
报告一个错误
更快的读取速度,GB/s
17.3
16
测试中的平均数值
更快的写入速度,GB/s
14.8
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
G Skill Intl F4-3600C19-16GSXWB 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
30
读取速度,GB/s
16.0
17.3
写入速度,GB/s
12.5
14.8
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
3544
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
G Skill Intl F4-3600C19-16GSXWB 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965525-018.A00LF 4GB
Corsair CMK32GX4M4B3600C16 8GB
Samsung M471B1G73DB0-YK0 8GB
Gold Key Technology Co Ltd NMUD480E86-3200D 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology CT8G4SFS8213.C8FH1 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Team Group Inc. TEAMGROUP-UD4-4300 8GB
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology BLS4G4D26BFSB.8FD2 4GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Kingston 9905622-075.A00G 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
DSL Memory D4SH1G081SH26A-C 8GB
AMD AE34G1601U1 4GB
Samsung M393A1G43DB1-CRC 8GB
Crucial Technology CT25664BA160B.C16F 2GB
Micron Technology 16ATF2G64HZ-3G2E1 16GB
G Skill Intl F2-5300CL4-1GBSA 1GB
Corsair CMWX8GD3000C15W4 8GB
Samsung M393B1K70CH0-CH9 8GB
Teikon TMA41GU6AFR8N-TFSC 8GB
Kingston 99U5428-018.A00LF 8GB
Chun Well Technology Holding Limited CL18-20-20 D4-3600
Samsung M391B5273CH0-CH9 4GB
Corsair CMK64GX4M4B3466C16 16GB
Apacer Technology 78.A1GC6.9H10C 2GB
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB
报告一个错误
×
Bug description
Source link