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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
48
左右 50% 更低的延时
需要考虑的原因
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
报告一个错误
更快的读取速度,GB/s
16.8
16
测试中的平均数值
更快的写入速度,GB/s
15.7
12.5
测试中的平均数值
更高的内存带宽,mbps
25600
19200
左右 1.33 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Gold Key Technology Co Ltd NMSO416E82-3200E 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
48
读取速度,GB/s
16.0
16.8
写入速度,GB/s
12.5
15.7
内存带宽,mbps
19200
25600
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
2925
3047
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
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Gold Key Technology Co Ltd NMSO416E82-3200E 16GB RAM的比较
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RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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报告一个错误
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Bug description
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