RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
更快的读取速度,GB/s
16
13.8
测试中的平均数值
更快的写入速度,GB/s
12.5
11.0
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
13.8
写入速度,GB/s
12.5
11.0
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2690
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N-TF 8GB RAM的比较
Samsung M323R2GA3BB0-CQKOD 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Corsair CMSX32GX4M2A3200C22 16GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited CL16-20-20 D4-3000
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3600C17-8GTZ 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Corsair CMD32GX4M4C3200C16-R 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 9905678-006.A00G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
Corsair CMT64GX4M4Z3600C18 16GB
Samsung M395T2863QZ4-CF76 1GB
G Skill Intl F4-3000C16-16GTZR 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. W-HK26S16G 16GB
Team Group Inc. UD5-6400 16GB
Micron Technology 8ATF1G64AZ-2G1A1 8GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology BLE8G4D26AFEA.16FAD 8GB
Samsung M395T2863QZ4-CF76 1GB
Samsung M378A1K43BB1-CPB 8GB
Corsair CMK64GX5M2B5200C40 32GB
Kingston CBD24D4S7D8MB-16 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology CT4G4SFS8266.C8FE 4GB
报告一个错误
×
Bug description
Source link