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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
需要考虑的原因
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
报告一个错误
低于PassMark测试中的延时,ns
22
24
左右 -9% 更低的延时
更快的读取速度,GB/s
17.2
16
测试中的平均数值
更快的写入速度,GB/s
13.0
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
22
读取速度,GB/s
16.0
17.2
写入速度,GB/s
12.5
13.0
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3007
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
InnoDisk Corporation M4SI-8GS1NC0K-C 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
PNY Electronics PNY 2GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Kingston 9905471-006.A00LF 4GB
Kingston 9905702-150.A00G 8GB
Samsung M471A5244CB0-CWE 4GB
SK Hynix HMA82GU6DJR8N-VK 16GB
Crucial Technology CT102464BF160B-16F 8GB
Corsair CM4X4GD3000C16K2 4GB
SK Hynix HMT425S6CFR6A-PB 2GB
Kingston XW21KG-MIE2 8GB
Kingston 9905403-061.A00LF 2GB
Kingston KHX3200C16D4/32GX 32GB
Kingston 99U5584-004.A00LF 4GB
G Skill Intl F4-4000C19-8GTZSW 8GB
Samsung M378A1K43EB2-CWE 8GB
Kingston ACR32D4S2S8ME-16 16GB
Kingston KF552C40-16 16GB
Kingston XCCT36-MIE 16GB
Samsung M471B5674QH0-YK0 2GB
G Skill Intl F4-4500C19-8GTZSWE 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Gloway International Co. Ltd. TYA4U2666D19161C 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2666C18-4GRS 4GB
Kingston ACR16D3LS1KNG/4G 4GB
Kingston KP6FH5-MIE 32GB
G Skill Intl F5-6400J3239G16G 16GB
Kingston KHX3333C16D4/16GX 16GB
报告一个错误
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Bug description
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