Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

ISD Technology Limited KD48GU880-32A160X 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs ISD Technology Limited KD48GU880-32A160X 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

ISD Technology Limited KD48GU880-32A160X 8GB

ISD Technology Limited KD48GU880-32A160X 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

ISD Technology Limited KD48GU880-32A160X 8GB

需要考虑的原因
ISD Technology Limited KD48GU880-32A160X 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 24

左右 -4% 更低的延时
更快的读取速度，GB/s

16.8 16

测试中的平均数值
更快的写入速度，GB/s

13.9 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

ISD Technology Limited KD48GU880-32A160X 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 23
读取速度，GB/s

16.0 16.8
写入速度，GB/s

12.5 13.9
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 2872

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Crucial Technology BLS4G4D240FSB.M8FBD 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Asgard VML41UG-MIC1U22T1 8GB

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Wilk Elektronik S.A. GR1333D364L9/4G 4GB

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SK Hynix HMA81GU6DJR8N-VK 8GB

SK Hynix HMA81GU6DJR8N-VK 8GB

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G Skill Intl F4-3600C16-32GTZN 32GB

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