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Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3000C16-16GVRB 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB vs G Skill Intl F4-3000C16-16GVRB 16GB

总分
star star star star star
Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

总分
star star star star star
G Skill Intl F4-3000C16-16GVRB 16GB

G Skill Intl F4-3000C16-16GVRB 16GB

差异 规格 评论

差异

Nanya Technology NT2GT64U8HD0BY-AD 2GB 需要考虑的原因
Nanya Technology NT2GT64U8HD0BY-AD 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 16.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,256.8 left arrow 13.2
    测试中的平均数值
G Skill Intl F4-3000C16-16GVRB 16GB 需要考虑的原因
G Skill Intl F4-3000C16-16GVRB 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 64
    左右 -106% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT2GT64U8HD0BY-AD 2GB
G Skill Intl F4-3000C16-16GVRB 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    64 left arrow 31
  • 读取速度，GB/s
    4,651.3 left arrow 16.9
  • 写入速度，GB/s
    2,256.8 left arrow 13.2
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    837 left arrow 3300

Nanya Technology NT2GT64U8HD0BY-AD 2GB RAM的比较

G Skill Intl F2-6400CL5-4GBPQ 4GB
G Skill Intl F2-6400CL5-2GBNY 2GB

G Skill Intl F4-3000C16-16GVRB 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Samsung M393B1G70BH0-CK0 8GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Swissbit MEU25664D6BC2EP-30 2GB
G Skill Intl F4-2400C15-8GFXR 8GB
G Skill Intl F4-2400C15-8GFXR 8GB
内存RAM