Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905295-081.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9905295-081.A00LF 2GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston 9905295-081.A00LF 2GB

Kingston 9905295-081.A00LF 2GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 58

左右 59% 更低的延时
更快的写入速度，GB/s

12.5 1,340.7

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62% 更高的带宽

Kingston 9905295-081.A00LF 2GB

需要考虑的原因
Kingston 9905295-081.A00LF 2GB

报告一个错误

更快的读取速度，GB/s

2 16

测试中的平均数值

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9905295-081.A00LF 2GB

主要特点

存储器类型

DDR4 DDR2
PassMark中的延时，ns

24 58
读取速度，GB/s

16.0 2,717.6
写入速度，GB/s

12.5 1,340.7
内存带宽，mbps

19200 5300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 5-5-5-15 / 667 MHz
排名PassMark (越多越好)

2925 506

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9905295-081.A00LF 2GB

Kingston 9905295-081.A00LF 2GB

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Kingston 99U5428-042.A00G 4GB

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Ramaxel Technology RMT3170EB68F9W1600 4GB

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Samsung M391B5273CH0-CH9 4GB

Samsung M391B5273CH0-CH9 4GB

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