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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905295-081.A00LF 2GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9905295-081.A00LF 2GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston 9905295-081.A00LF 2GB

Kingston 9905295-081.A00LF 2GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 58
    左右 59% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 1,340.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62% 更高的带宽
Kingston 9905295-081.A00LF 2GB 需要考虑的原因
Kingston 9905295-081.A00LF 2GB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 16
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905295-081.A00LF 2GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR2
  • PassMark中的延时，ns
    24 left arrow 58
  • 读取速度，GB/s
    16.0 left arrow 2,717.6
  • 写入速度，GB/s
    12.5 left arrow 1,340.7
  • 内存带宽，mbps
    19200 left arrow 5300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 5-5-5-15 / 667 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 506

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston 9905295-081.A00LF 2GB RAM的比较

G Skill Intl F4-2933C16-16GFX 16GB
Crucial Technology CT16G4DFD8213.C16FAD 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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