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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905744-023.A00G 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9905744-023.A00G 16GB

总分
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston 9905744-023.A00G 16GB

Kingston 9905744-023.A00G 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 35
    左右 31% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 15.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 12.2
    测试中的平均数值
Kingston 9905744-023.A00G 16GB 需要考虑的原因
Kingston 9905744-023.A00G 16GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905744-023.A00G 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 35
  • 读取速度，GB/s
    16.0 left arrow 15.3
  • 写入速度，GB/s
    12.5 left arrow 12.2
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2640

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston 9905744-023.A00G 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston 9905744-023.A00G 16GB
Kingston 9905744-023.A00G 16GB
内存RAM
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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
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Kingston ACR26D4U9S8HJ-8 8GB
内存RAM
Samsung M393B1G70BH0-YK0 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
G Skill Intl F4-4000C17-8GTZRB 8GB
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Samsung M471B5273DH0-CK0 4GB
Samsung M471B5273DH0-CK0 4GB
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Mushkin MR[A/B]4U320LLLM8G 8GB
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Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
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Crucial Technology CT51264BA1339.C16F 4GB
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Dust Leopard DDR4-2400 C17 8GB 8GB
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Samsung M378B5273CH0-CH9 4GB
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InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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G Skill Intl F4-2133C15-8GRR 8GB
内存RAM
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A-DATA Technology DQVE1908 512MB
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Crucial Technology BLS8G4D30BESBK.8FB 8GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
Patriot Memory (PDP Systems) 3400 C16 Series 8GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
G Skill Intl F4-2666C18-8GRS 8GB
G Skill Intl F4-2666C18-8GRS 8GB
内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
Gold Key Technology Co Ltd NMUD480E86-3200 8GB
内存RAM
Patriot Memory (PDP Systems) PSD38G16002 8GB
Patriot Memory (PDP Systems) PSD38G16002 8GB
Kingston 9905598-026.A00G 16GB
Kingston 9905598-026.A00G 16GB
内存RAM