Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9965640-006.A01G 32GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston 9965640-006.A01G 32GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston 9965640-006.A01G 32GB

Kingston 9965640-006.A01G 32GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 34

左右 29% 更低的延时
更快的读取速度，GB/s

16 11

测试中的平均数值
更快的写入速度，GB/s

12.5 7.5

测试中的平均数值

Kingston 9965640-006.A01G 32GB

需要考虑的原因
Kingston 9965640-006.A01G 32GB

报告一个错误

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston 9965640-006.A01G 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 34
读取速度，GB/s

16.0 11.0
写入速度，GB/s

12.5 7.5
内存带宽，mbps

19200 19200

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2925 2220

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Kingston 9965640-006.A01G 32GB

Kingston 9965640-006.A01G 32GB

Kingston 9905403-174.A00LF 2GB

Kingston 9905403-174.A00LF 2GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLE8G4D26AFEA.16FAD 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Corsair CMN32GX4M2Z3600C18 16GB

Corsair CMN32GX4M2Z3600C18 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF2G64AZ-3G2E1 16GB

Micron Technology 8ATF2G64AZ-3G2E1 16GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

G Skill Intl F4-3200C16-8GIS 8GB

G Skill Intl F4-3200C16-8GIS 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

Crucial Technology BLS16G4D26BFSC.16FD 16GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

Micron Technology 9ASF1G72PZ-2G9E1 8GB

AMD R5316G1609U2K 8GB

AMD R5316G1609U2K 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramaxel Technology RMSA3320KE78HAF-3200 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Gold Key Technology Co Ltd NMUD480E82-3200E 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Crucial Technology CB8GS2400.C8ET 8GB

Crucial Technology CB8GS2400.C8ET 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Crucial Technology BLS16G4D32AESB.M16FE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-8GVR 8GB

G Skill Intl F4-3200C16-8GVR 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

Wilk Elektronik S.A. IRX3200D464L16SA/8G 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB