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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR26D4S9S8HJ-8 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston ACR26D4S9S8HJ-8 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Kingston ACR26D4S9S8HJ-8 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
35
左右 31% 更低的延时
更快的读取速度,GB/s
16
15.3
测试中的平均数值
需要考虑的原因
Kingston ACR26D4S9S8HJ-8 8GB
报告一个错误
更快的写入速度,GB/s
12.6
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR26D4S9S8HJ-8 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
35
读取速度,GB/s
16.0
15.3
写入速度,GB/s
12.5
12.6
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
2815
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Kingston ACR26D4S9S8HJ-8 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Samsung M393B5170FH0-CK0 4GB
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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMN16GX4M2Z3200C16 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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G Skill Intl F5-6400J3239G16G 16GB
Crucial Technology CT8G4SFD824A.M16FB 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kingston ACR26D4U9S8ME-8X 8GB
Corsair CML8GX3M2A1866C9 4GB
Essencore Limited IM44GU48N26-FFFHM 4GB
Kingston 9965525-140.A00LF 8GB
Corsair CMSX16GX4M2A2400C16 8GB
报告一个错误
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Bug description
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