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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR26D4U9S8ME-8 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston ACR26D4U9S8ME-8 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston ACR26D4U9S8ME-8 8GB

Kingston ACR26D4U9S8ME-8 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 30
    左右 20% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 11.3
    测试中的平均数值
Kingston ACR26D4U9S8ME-8 8GB 需要考虑的原因
Kingston ACR26D4U9S8ME-8 8GB
报告一个错误
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston ACR26D4U9S8ME-8 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 30
  • 读取速度，GB/s
    16.0 left arrow 16.0
  • 写入速度，GB/s
    12.5 left arrow 11.3
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2901

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston ACR26D4U9S8ME-8 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston ACR26D4U9S8ME-8 8GB
Kingston ACR26D4U9S8ME-8 8GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
内存RAM
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CM4X16GF3200C22S2 16GB
Corsair CM4X16GF3200C22S2 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Neo Forza NMUD480E82-2666 8GB
Neo Forza NMUD480E82-2666 8GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
Crucial Technology BLS16G4D26BFST.16FD 16GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9965589-035.D00G 16GB
Kingston 9965589-035.D00G 16GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
Corsair CM2X1024-8500C5D 1GB
G Skill Intl F4-3600C19-8GSXWB 8GB
G Skill Intl F4-3600C19-8GSXWB 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
UMAX Technology 16GB
UMAX Technology 16GB
内存RAM
SK Hynix HMA81GS6JJR8N-VK 8GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
Patriot Memory (PDP Systems) 2666 C16 Series 8GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston X6TCK6-MIE 32GB
Kingston X6TCK6-MIE 32GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Lexar Co Limited LD4AU016G-H2666G 16GB
Lexar Co Limited LD4AU016G-H2666G 16GB
内存RAM
Kingston ACR256X64D3S1333C9 2GB
Kingston ACR256X64D3S1333C9 2GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
Lexar Co Limited LD4AU008G-H3200GST 8GB
内存RAM
Kingston 99U5584-001.A00LF 4GB
Kingston 99U5584-001.A00LF 4GB
G Skill Intl F4-3600C18-16GTZN 16GB
G Skill Intl F4-3600C18-16GTZN 16GB
内存RAM
Corsair CMY16GX3M4A2133C8 4GB
Corsair CMY16GX3M4A2133C8 4GB
Kingston 9965643-006.A01G 8GB
Kingston 9965643-006.A01G 8GB
内存RAM