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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston KHX4000C19D4/8GX 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston KHX4000C19D4/8GX 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston KHX4000C19D4/8GX 8GB

Kingston KHX4000C19D4/8GX 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 26
    左右 8% 更低的延时
Kingston KHX4000C19D4/8GX 8GB 需要考虑的原因
Kingston KHX4000C19D4/8GX 8GB
报告一个错误
  • 更快的读取速度，GB/s
    19.2 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    17.1 left arrow 12.5
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston KHX4000C19D4/8GX 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 26
  • 读取速度，GB/s
    16.0 left arrow 19.2
  • 写入速度，GB/s
    12.5 left arrow 17.1
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3856

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston KHX4000C19D4/8GX 8GB RAM的比较

Corsair CMSX32GX4M2A3200C22 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX4000C19D4/8GX 8GB
Kingston KHX4000C19D4/8GX 8GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
A-DATA Technology AO1P32NC8W1-BD2SHC 8GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Chun Well Technology Holding Limited ND4U1636181DRLDE 16GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
A-DATA Technology AO1P32NCSV1-BEWS 16GB
内存RAM
Kingston 99U5584-004.A00LF 4GB
Kingston 99U5584-004.A00LF 4GB
Corsair CM4X16GD3200C16K4E 16GB
Corsair CM4X16GD3200C16K4E 16GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Gloway International (HK) STK4U2400D17042C 4GB
Gloway International (HK) STK4U2400D17042C 4GB
内存RAM
Kreton Corporation 51624xxxx68x35xxxx 2GB
Kreton Corporation 51624xxxx68x35xxxx 2GB
SK Hynix HMA81GU6JJR8N-VK 8GB
SK Hynix HMA81GU6JJR8N-VK 8GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
Virtium Technology Inc. VL4A1G63A-N6SE-NI 8GB
内存RAM
Transcend Information TS512MSK64W6H 4GB
Transcend Information TS512MSK64W6H 4GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
内存RAM
Samsung M393B1K70CHD-CH9 8GB
Samsung M393B1K70CHD-CH9 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
G Skill Intl F4-3600C16-8GTZRC 8GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Mushkin MRA4S320GJJM32G 32GB
Mushkin MRA4S320GJJM32G 32GB
内存RAM
Kingston KHX2133C11D3/4GX 4GB
Kingston KHX2133C11D3/4GX 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
G Skill Intl F4-3000C15-8GVRB 8GB
G Skill Intl F4-3000C15-8GVRB 8GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
Crucial Technology BLS8G4S26BFSDK.8FBD 8GB
内存RAM