Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston KY7N41-MIE 8GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 33

左右 27% 更低的延时
更快的写入速度，GB/s

12.5 12.4

测试中的平均数值

Kingston KY7N41-MIE 8GB

需要考虑的原因
Kingston KY7N41-MIE 8GB

报告一个错误

更快的读取速度，GB/s

16.2 16

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston KY7N41-MIE 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 33
读取速度，GB/s

16.0 16.2
写入速度，GB/s

12.5 12.4
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 2948

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Corsair CMT128GX4M8C3000C15 16GB

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Samsung M393B1G70BH0-YK0 8GB

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Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingston 9905670-012.A00G 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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Ramaxel Technology RMSA3270MB76H8F2400 2GB

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Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

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Crucial Technology CT16G4SFD824A.M16FH 16GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Smart Modular SF4641G8CK8IWGKSEG 8GB

Smart Modular SF4641G8CK8IWGKSEG 8GB