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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston XF875V-HYA 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston XF875V-HYA 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Kingston XF875V-HYA 8GB

Kingston XF875V-HYA 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 39
    左右 38% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 13.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.5 left arrow 11.4
    测试中的平均数值
Kingston XF875V-HYA 8GB 需要考虑的原因
Kingston XF875V-HYA 8GB
报告一个错误

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston XF875V-HYA 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 39
  • 读取速度，GB/s
    16.0 left arrow 13.3
  • 写入速度，GB/s
    12.5 left arrow 11.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 2274

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Kingston XF875V-HYA 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology CT16G48C40U5.M8A1 16GB
Crucial Technology CT16G48C40U5.M8A1 16GB
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Lexar Co Limited LD4AS016G-H2666G 16GB
内存RAM
Kingston KP4T2F-PSB 4GB
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内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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Avexir Technologies Corporation DDR4-3200 CL16 4GB 4GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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内存RAM
Samsung M393B1G70QH0-YK0 8GB
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Kingston KTC1G-UDIMM 1GB
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内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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Micron Technology 36ASF2G72PZ-2G3B1 16GB
内存RAM
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Kingston 99U5595-005.A00LF 2GB
A-DATA Technology DDR4 4133 2OZ 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
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内存RAM
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SanMax Technologies Inc. SMD4-U8G48MA-24R 8GB
内存RAM
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Samsung M3 78T2863EHS-CF7 1GB
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G Skill Intl F4-3200C15-8GVK 8GB
内存RAM
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A-DATA Technology DDR4 3600 2OZ 8GB
内存RAM
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Samsung M3 93T5750CZA-CE6 2GB
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Apacer Technology 78.BAGP4.AR50C 4GB
内存RAM
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Samsung M393B1G70BH0-CK0 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM