Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XN205T-HYD2 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Kingston XN205T-HYD2 16GB

总分

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分

Kingston XN205T-HYD2 16GB

Kingston XN205T-HYD2 16GB

差异规格评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

24 28

左右 14% 更低的延时

Kingston XN205T-HYD2 16GB

需要考虑的原因
Kingston XN205T-HYD2 16GB

报告一个错误

更快的读取速度，GB/s

17.5 16

测试中的平均数值
更快的写入速度，GB/s

16.6 12.5

测试中的平均数值
更高的内存带宽，mbps

21300 19200

左右 1.11 更高的带宽

规格

完整的技术规格清单

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Kingston XN205T-HYD2 16GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

24 28
读取速度，GB/s

16.0 17.5
写入速度，GB/s

12.5 16.6
内存带宽，mbps

19200 21300

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2925 3773

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M393A5143DB0-CRC 4GB

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PNY Electronics PNY 2GB

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Kingston ACR26D4U9D8MH-16 16GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KC5N22-MIE 16GB

Kingston KC5N22-MIE 16GB

Samsung M471B5773DH0-CK0 2GB

Samsung M471B5773DH0-CK0 2GB

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Nanya Technology NT2GC64B8HC0NF-CG 2GB

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SK Hynix HYMP512U64CP8-Y5 1GB

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