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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Micron Technology 16ATF2G64HZ-2G3E2 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Micron Technology 16ATF2G64HZ-2G3E2 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
27
左右 11% 更低的延时
需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E2 16GB
报告一个错误
更快的读取速度,GB/s
16.5
16
测试中的平均数值
更快的写入速度,GB/s
13.6
12.5
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
27
读取速度,GB/s
16.0
16.5
写入速度,GB/s
12.5
13.6
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2892
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology 8G4US2400.M8B1 8GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3600C16-16GTRS 16GB
Samsung M471B5173QH0-YK0 4GB
Panram International Corporation D4U2666P-8G 8GB
Samsung M3 78T2953EZ3-CF7 1GB
Crucial Technology BLS8G4D26BFSE.16FB 8GB
Corsair CMX4GX3M2A1600C9 2GB
G Skill Intl F4-3600C16-8GTZR 8GB
SpecTek Incorporated ?????????????????? 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6JJR8N
Corsair CMSX4GX3M1A1600C9 4GB
Samsung M474A4G43MB1-CTD 32GB
Samsung M378A1G43DB0-CPB 8GB
Crucial Technology BLS8G4D240FSE.16FBD 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Ramaxel Technology RMUA5120ME86H9F-2666 4GB
PNY Electronics PNY 2GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
Kingston HP669238-071-HYC 4GB
Mushkin 99[2/7/4]200[F/T] 8GB
Kingston 9905471-002.A00LF 2GB
Essencore Limited KD48GU880-32N220T 8GB
Samsung M391B5273CH0-CH9 4GB
Samsung M378A4G43MB1-CTD 32GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Corsair CMK64GX4M4B3600C18 16GB
报告一个错误
×
Bug description
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