RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Ramaxel Technology RMSA3270MB86H9F2400 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Ramaxel Technology RMSA3270MB86H9F2400 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
39
左右 38% 更低的延时
更快的读取速度,GB/s
16
14.4
测试中的平均数值
更快的写入速度,GB/s
12.5
9.4
测试中的平均数值
需要考虑的原因
Ramaxel Technology RMSA3270MB86H9F2400 4GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
39
读取速度,GB/s
16.0
14.4
写入速度,GB/s
12.5
9.4
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
1966
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Ramaxel Technology RMSA3270MB86H9F2400 4GB RAM的比较
Samsung M393B1K70CH0-CH9 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GU6MFR8N
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Ramaxel Technology RMSA3270MB86H9F2400 4GB
Samsung M471A1G44AB0-CWE 8GB
Corsair CMD16GX4M2B3200C16 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston ACR24D4U7D8MB-16 16GB
Swissbit MEU25664D6BC2EP-30 2GB
SanMax Technologies Inc. SMD4-U8G48ME-26V 8GB
Samsung M378B5773DH0-CH9 2GB
Mushkin 99[2/7/4]205F 8GB
Kingston MSI16D3LS1MNG/8G 8GB
G Skill Intl F4-3200C22-16GRS 16GB
PNY Electronics PNY 2GB
Kingston 9905678-014.A00G 4GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Micron Technology 4ATF51264AZ-3G2E1 4GB
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F4-3600C16-8GTZ 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT4G4SFS624A.C4FB 4GB
Kingston 99U5474-010.A00LF 2GB
Crucial Technology CT4G4DFS8213.C8FBD1 4GB
Hynix Semiconductor (Hyundai Electronics) HMT42GR7MFR4A
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Kingston HX318C10FK/4 4GB
G Skill Intl F4-4000C17-8GVKB 8GB
报告一个错误
×
Bug description
Source link