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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SK Hynix HMA82GU6JJR8N-VK 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
SK Hynix HMA82GU6JJR8N-VK 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
35
左右 31% 更低的延时
需要考虑的原因
SK Hynix HMA82GU6JJR8N-VK 16GB
报告一个错误
更快的写入速度,GB/s
12.7
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix HMA82GU6JJR8N-VK 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
35
读取速度,GB/s
16.0
16.0
写入速度,GB/s
12.5
12.7
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3127
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SK Hynix HMA82GU6JJR8N-VK 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
SK Hynix HMA82GU6JJR8N-VK 16GB
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G Skill Intl F4-3200C14-8GTRS 8GB
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Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N
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Samsung M393B5270CH0-CH9 4GB
Essencore Limited KD48GS88C-32N2200 8GB
Kingston 9905403-156.A00LF 2GB
G Skill Intl F4-4000C18-16GTRG 16GB
Kingston 99U5474-010.A00LF 2GB
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Kingston 9905403-134.A00LF 2GB
Corsair CMK64GX4M4D3000C16 16GB
Smart Modular SH564128FH8NZQNSCG 4GB
Corsair CMT64GX4M8X3600C18 8GB
报告一个错误
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