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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs SK Hynix V-GeN D4H4GL26A8TL 4GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
SK Hynix V-GeN D4H4GL26A8TL 4GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
68
左右 65% 更低的延时
更快的写入速度,GB/s
12.5
8.1
测试中的平均数值
需要考虑的原因
SK Hynix V-GeN D4H4GL26A8TL 4GB
报告一个错误
更快的读取速度,GB/s
16.2
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
SK Hynix V-GeN D4H4GL26A8TL 4GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
68
读取速度,GB/s
16.0
16.2
写入速度,GB/s
12.5
8.1
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
1812
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
SK Hynix V-GeN D4H4GL26A8TL 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
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Corsair CMK16GX4M2Z2400C16 8GB
Kingston 9905403-134.A00LF 2GB
A-DATA Technology DDR4 3200 8GB
Elpida EBJ41UF8BDU5-GN-F 4GB
Kingston 9905624-044.A00G 8GB
A-DATA Technology AD73I1B1672EG 2GB
Teikon TMA851S6CJR6N-VKSC 4GB
Kingston 9965525-155.A00LF 8GB
Corsair CMW32GX4M2D3000C16 16GB
Kingston 99U5584-001.A00LF 4GB
Crucial Technology CT8G4DFS824A.M8FH3 8GB
Kingston 9905403-090.A01LF 4GB
G Skill Intl F4-3200C14-16GFX 16GB
报告一个错误
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Bug description
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