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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Super Talent F24EB8GS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Super Talent F24EB8GS 8GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
Super Talent F24EB8GS 8GB

Super Talent F24EB8GS 8GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 31
    左右 23% 更低的延时
  • 更快的写入速度，GB/s
    12.5 left arrow 12.4
    测试中的平均数值
Super Talent F24EB8GS 8GB 需要考虑的原因
Super Talent F24EB8GS 8GB
报告一个错误
  • 更快的读取速度，GB/s
    16.2 left arrow 16
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Super Talent F24EB8GS 8GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 31
  • 读取速度，GB/s
    16.0 left arrow 16.2
  • 写入速度，GB/s
    12.5 left arrow 12.4
  • 内存带宽，mbps
    19200 left arrow 19200
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-19200, 1.2V, CAS Supported: 13 14 15 16 17
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3017

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

Super Talent F24EB8GS 8GB RAM的比较

Kingston 99U5403-036.A00G 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M471B5273DH0-YK0 4GB
Samsung M471B5273DH0-YK0 4GB
Corsair CMW32GX4M2D3000C16 16GB
Corsair CMW32GX4M2D3000C16 16GB
内存RAM
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TwinMOS 9DNPBNZB-TATP 4GB
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内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
内存RAM
Kingston KHX1866C10D3/4G 4GB
Kingston KHX1866C10D3/4G 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GR7MFR4N
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
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Kingston KHX318C10FR/8G 8GB
Kingston KHX318C10FR/8G 8GB
Kingston M378A1K43CB2-CRC 8GB
Kingston M378A1K43CB2-CRC 8GB
内存RAM
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PUSKILL PJ8TFK1GM8 8GB
PUSKILL PJ8TFK1GM8 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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内存RAM
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Mushkin 99[2/7/4]198F 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
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Golden Empire CL15-17-17 D4-3200 8GB
内存RAM
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Kingston 9905471-002.A00LF 2GB
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内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
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Crucial Technology CT25664BA1339.C8F1 2GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
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Crucial Technology BLS8G4S26BFSD.16FBD2 8GB
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