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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
32
左右 25% 更低的延时
需要考虑的原因
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
报告一个错误
更快的读取速度,GB/s
19.9
16
测试中的平均数值
更快的写入速度,GB/s
14.9
12.5
测试中的平均数值
更高的内存带宽,mbps
21300
19200
左右 1.11 更高的带宽
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
32
读取速度,GB/s
16.0
19.9
写入速度,GB/s
12.5
14.9
内存带宽,mbps
19200
21300
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2925
3372
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B5170FH0-CK0 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLT2G3D1608DT1TX0 2GB
Crucial Technology BLE8G4D36BEEAK.M8FE3 8GB
Samsung M395T2863QZ4-CF76 1GB
Teikon TMA451S6AFR8N-TFSC 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Thermaltake Technology Co Ltd R022D408GX2-3200C16A 8GB
Samsung M4 70T2953EZ3-CE6 1GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Elpida EBJ10UE8BAFA-AE-E 1GB
Corsair CMD32GX4M4C3466C16W 8GB
Kingston KHX2133C11D3/4GX 4GB
Crucial Technology CT16G4SFRA266.M16FRS 16GB
Samsung M471B5173QH0-YK0 4GB
Gold Key Technology Co Ltd GKE800SO51216-2400 8GB
Samsung M393A1G40DB0-CPB 8GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
G Skill Intl F4-3600C16-8GTZKK 8GB
Samsung M378A2K43CB1-CRC 16GB
Samsung M471B5273CH0-CH9 4GB
Corsair CMW16GX4M1Z3200C16 16GB
Samsung M471B1G73DB0-YK0 8GB
G Skill Intl F4-3200C16-16GTZSW 16GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BL8G32C16U4R.M8FE 8GB
Team Group Inc. Vulcan-1600 4GB
Micron Technology 8ATF1G64AZ-3G2E1 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
G Skill Intl F4-4000C19-16GTZSW 16GB
报告一个错误
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Bug description
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