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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
29
左右 17% 更低的延时
更快的读取速度,GB/s
16
13.2
测试中的平均数值
更快的写入速度,GB/s
12.5
10.6
测试中的平均数值
更高的内存带宽,mbps
19200
17000
左右 1.13% 更高的带宽
需要考虑的原因
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
报告一个错误
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
29
读取速度,GB/s
16.0
13.2
写入速度,GB/s
12.5
10.6
内存带宽,mbps
19200
17000
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2925
2464
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung 1600 CL10 Series 8GB
Corsair CM4B8G2J2400A14K 8GB
Samsung M393B5170FH0-CK0 4GB
Apacer Technology 78.CAGNT.AR40B 8GB
Kingston 99U5474-028.A00LF 4GB
Thermaltake Technology Co Ltd RA24D408GX2-3600C18A 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 4ATF51264HZ-2G3E2 4GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4D26BFSBK.8FBR 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS4G4D26BFSE.8FE 4GB
Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT4G4DFS8213.C8FHP 4GB
Kingston HX318C10FK/4 4GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F4-3000C15-8GTZ 8GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-3200C16-8GRKB 8GB
Samsung M471A5244CB0-CWE 4GB
Kingmax Semiconductor GSAG42F-18---------- 8GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Kingston XJV223-MIE-NX 16GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT8G4SFS832A.M8FRS 8GB
Samsung M393B2G70BH0-CK0 16GB
Kingston RB24D4U7S8MB-8 8GB
报告一个错误
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Bug description
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