RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs Wilk Elektronik S.A. IR2400D464L17/16G 16GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
总分
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
差异
规格
评论
差异
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
更快的写入速度,GB/s
12.5
9.6
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
23
24
左右 -4% 更低的延时
更快的读取速度,GB/s
16.8
16
测试中的平均数值
规格
完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
24
23
读取速度,GB/s
16.0
16.8
写入速度,GB/s
12.5
9.6
内存带宽,mbps
19200
19200
Other
描述
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2925
2726
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较
Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB
Wilk Elektronik S.A. IR2400D464L17/16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Golden Empire 1GB DDR2 800 CAS=4 1GB
Crucial Technology BLM16G44C19U4B.M8FB1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. IR2400D464L17/16G 16GB
G Skill Intl F5-5600J4040C16G 16GB
Corsair CMK8GX4M2A2133C13 4GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CMT32GX4M2E3200C16 16GB
Kingston K531R8-MIN 4GB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Nanya Technology NT2GT64U8HD0BN-AD 2GB
Micron Technology 18ASF1G72AZ-2G1B1 8GB
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-3600C16-16GTZRC 16GB
Kingston 9905469-143.A00LF 4GB
Corsair CMSX32GX4M2A3000C16 16GB
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905734-022.A00G 16GB
Samsung M3 78T3354BZ0-CCC 256MB
G Skill Intl F4-3333C16-16GTZB 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3200C16-16GRS 16GB
Kingston DDR3 1333G 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Kingston KHX1600C9D3/4G 4GB
Apacer Technology 78.DAGQ7.40B0B 16GB
Samsung M378B5273CH0-CH9 4GB
G Skill Intl F4-2800C15-4GTZB 4GB
报告一个错误
×
Bug description
Source link