Kingmax Semiconductor FLFE85F-C8KL9 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 63

左右 57% 更低的延时

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

需要考虑的原因
Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

报告一个错误

更快的读取速度，GB/s

16.6 10.1

测试中的平均数值
更快的写入速度，GB/s

8.2 6.2

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Avexir Technologies Corporation DDR4-2666 C17 4GB 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 63
读取速度，GB/s

10.1 16.6
写入速度，GB/s

6.2 8.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1411 1863

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Mushkin MR[A/B]4U346GJJM8G 8GB

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Samsung M471B5173DB0-YK0 4GB

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Corsair CMK16GX4M2B3000C15 8GB

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Kingston 9965525-155.A00LF 8GB

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Corsair CM4X4GF2666Z16K4 4GB

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V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

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Panram International Corporation PUD42400C154G2NJW 4GB

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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Samsung M471A2K43BB1-CTD 16GB

Samsung M471A2K43BB1-CTD 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

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G Skill Intl F4-3200C14-8GFX 8GB

G Skill Intl F4-3200C14-8GFX 8GB