Kingmax Semiconductor FLFE85F-C8KL9 2GB vs Kingston 9905678-028.A00G 8GB

总分

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingmax Semiconductor FLFE85F-C8KL9 2GB

总分

Kingston 9905678-028.A00G 8GB

Kingston 9905678-028.A00G 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KL9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KL9 2GB

报告一个错误

Kingston 9905678-028.A00G 8GB

需要考虑的原因
Kingston 9905678-028.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

24 27

左右 -13% 更低的延时
更快的读取速度，GB/s

15.9 10.1

测试中的平均数值
更快的写入速度，GB/s

10.9 6.2

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KL9 2GB

Kingston 9905678-028.A00G 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 24
读取速度，GB/s

10.1 15.9
写入速度，GB/s

6.2 10.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1411 2725

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CF7 2GB

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Crucial Technology CT16G4SFD8266.C16FE 16GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Samsung M393B1G70BH0-CK0 8GB

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InnoDisk Corporation 16GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Kingston 9905665-021.A00G 4GB

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Crucial Technology CT8G4SFS824A.C8FP 8GB

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Nanya Technology M2X4G64CB8HG9N-DG 4GB

Nanya Technology M2X4G64CB8HG9N-DG 4GB

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V-Color Technology Inc. TD416G26D819-VC 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

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Kingston XG9XKG-MIE 16GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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