Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 30

左右 13% 更低的延时

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

需要考虑的原因
Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

报告一个错误

更快的读取速度，GB/s

14.5 11.9

测试中的平均数值
更快的写入速度，GB/s

11.4 7.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 30
读取速度，GB/s

11.9 14.5
写入速度，GB/s

7.6 11.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1610 2516

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Crucial Technology BLS8G4S26BFSD.16FBR2 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

V-Color Technology Inc. TL48G30S8KGRGB15 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Patriot Memory (PDP Systems) PSD416G21332 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Mushkin 99[2/7/4]205[F/T] 8GB

Mushkin 99[2/7/4]205[F/T] 8GB

AMD AE34G2139U2 4GB

AMD AE34G2139U2 4GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

Micron Technology 8ATF1G64HZ-2G3H1 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

SK Hynix HMT31GR7CFR4C-PB 8GB

SK Hynix HMT31GR7CFR4C-PB 8GB

EXCELERAM EKBLACK4163016AD 8GB

EXCELERAM EKBLACK4163016AD 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

A-DATA Technology DDR4 2133 2OZ 8GB

A-DATA Technology DDR4 2133 2OZ 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Crucial Technology CT8G4DFS824A.C8FHD1 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

G Skill Intl F4-3333C16-8GTZ 8GB

G Skill Intl F4-3333C16-8GTZ 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology AQD-D4U8GN24-SE 8GB

Apacer Technology 78.CAGPN.DF40B 8GB

Apacer Technology 78.CAGPN.DF40B 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Apacer Technology GD2.1527WC.001 8GB

Apacer Technology GD2.1527WC.001 8GB

Samsung M3 78T6553CZ3-CD5 512MB

Samsung M3 78T6553CZ3-CD5 512MB

Essencore Limited IM48GU88N26-GIIHA 8GB

Essencore Limited IM48GU88N26-GIIHA 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB