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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB vs InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

总分
star star star star star
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB

差异 规格 评论

差异

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 27
    左右 11% 更低的延时
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB 需要考虑的原因
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 16
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 12.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 19200
    左右 1.11 更高的带宽

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    24 left arrow 27
  • 读取速度，GB/s
    16.0 left arrow 18.0
  • 写入速度，GB/s
    12.5 left arrow 15.1
  • 内存带宽，mbps
    19200 left arrow 21300
Other
  • 描述
    PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2925 left arrow 3711

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Samsung M3 93T2950EZ3-CCC 1GB

InnoDisk Corporation M4UI-AGS1KC0K-C 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
InnoDisk Corporation M4UI-AGS1KC0K-C 16GB
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Smart Modular SG564568FG8N6KF-Z2 2GB
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Corsair CMSX64GX4M2A2933C19 32GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
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ASint Technology SSA302G08-EGN1C 4GB
ASint Technology SSA302G08-EGN1C 4GB
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Kingston KHX2133C13D4/4GX 4GB
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Apacer Technology 78.A1GC6.9H10C 2GB
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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
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AMD R538G1601U2S 8GB
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Kingston 9905702-204.A00G 8GB
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SK Hynix HMT325S6CFR8C-H9 2GB
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Kingston 9905711-002.A00G 4GB
内存RAM
Samsung M3 78T5663RZ3-CF7 2GB
Samsung M3 78T5663RZ3-CF7 2GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
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Corsair CMK16GX4M2B4266C19 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
V-Color Technology Inc. TL8G36818D-E6PRKWK 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
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Essencore Limited IM48GU88N24-FFFHAB 8GB
内存RAM
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Kingston KVR16N11/8-SP 8GB
Transcend Information TS512MSH64V4H 4GB
Transcend Information TS512MSH64V4H 4GB
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