Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Micron Technology 36ASF4G72PZ-2G1A1 32GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

Micron Technology 36ASF4G72PZ-2G1A1 32GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

低于PassMark测试中的延时，ns

26 37

左右 30% 更低的延时
更快的读取速度，GB/s

11.9 9.6

测试中的平均数值

Micron Technology 36ASF4G72PZ-2G1A1 32GB

需要考虑的原因
Micron Technology 36ASF4G72PZ-2G1A1 32GB

报告一个错误

更快的写入速度，GB/s

7.8 7.6

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Micron Technology 36ASF4G72PZ-2G1A1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 37
读取速度，GB/s

11.9 9.6
写入速度，GB/s

7.6 7.8
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1610 2082

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471A1K43CB1-CTD 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Corsair CMN32GX4M2Z3200C16 16GB

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Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Panram International Corporation D4U2666P-8G 8GB

Panram International Corporation D4U2666P-8G 8GB