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Kingmax Semiconductor FLFE85F-C8KM9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB vs Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

总分
star star star star star
Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分
star star star star star
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB

差异 规格 评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB 需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 31
    左右 16% 更低的延时
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB 需要考虑的原因
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
报告一个错误
  • 更快的读取速度，GB/s
    20.5 left arrow 11.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.5 left arrow 7.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 31
  • 读取速度，GB/s
    11.9 left arrow 20.5
  • 写入速度，GB/s
    7.6 left arrow 15.5
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    1610 left arrow 3649

Kingmax Semiconductor FLFE85F-C8KM9 2GB RAM的比较

Samsung M378B5673EH1-CH9 2GB
Kingston KHX2400C15/8G 8GB

Shenzhen Micro Innovation Industry KF3200DDCD4 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingmax Semiconductor FLFE85F-C8KM9 2GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
内存RAM
Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
Kingston HP26D4S9S8ME-8 8GB
Kingston HP26D4S9S8ME-8 8GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Samsung M393A1G43DB1-CRC 8GB
Samsung M393A1G43DB1-CRC 8GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
内存RAM
SK Hynix HYMP125S64CP8-S6 2GB
SK Hynix HYMP125S64CP8-S6 2GB
Samsung M4 70T5663QH3-CF7 2GB
Samsung M4 70T5663QH3-CF7 2GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-4000C17-16GTRGB 16GB
G Skill Intl F4-4000C17-16GTRGB 16GB
内存RAM
Samsung M4 70T2864QZ3-CF7 1GB
Samsung M4 70T2864QZ3-CF7 1GB
G Skill Intl F4-3200C15-16GVR 16GB
G Skill Intl F4-3200C15-16GVR 16GB
内存RAM
Kingston MSI16D3LS1MNG/8G 8GB
Kingston MSI16D3LS1MNG/8G 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
G Skill Intl F4-3866C18-8GTZR 8GB
内存RAM
Ramaxel Technology RMR5030ME68F9F1600 4GB
Ramaxel Technology RMR5030ME68F9F1600 4GB
Kingston HP24D4U7S8MD-8 8GB
Kingston HP24D4U7S8MD-8 8GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston KF3000C16D4/32GX 32GB
Kingston KF3000C16D4/32GX 32GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Corsair CM4X16GE2666C18S2 16GB
Corsair CM4X16GE2666C18S2 16GB
内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Corsair CMH128GX4M4E3200C16 32GB
Corsair CMH128GX4M4E3200C16 32GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Corsair CM4X16GC3200C16K2E 16GB
Corsair CM4X16GC3200C16K2E 16GB
内存RAM