Kingmax Semiconductor FLFE85F-C8KM9 2GB vs SK Hynix HMA82GS6CJR8N-V-V 16GB

总分

Kingmax Semiconductor FLFE85F-C8KM9 2GB

Kingmax Semiconductor FLFE85F-C8KM9 2GB

总分

SK Hynix HMA82GS6CJR8N-V-V 16GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

差异规格评论

差异

Kingmax Semiconductor FLFE85F-C8KM9 2GB

需要考虑的原因
Kingmax Semiconductor FLFE85F-C8KM9 2GB

报告一个错误

SK Hynix HMA82GS6CJR8N-V-V 16GB

需要考虑的原因
SK Hynix HMA82GS6CJR8N-V-V 16GB

报告一个错误

低于PassMark测试中的延时，ns

23 26

左右 -13% 更低的延时
更快的读取速度，GB/s

16.2 11.9

测试中的平均数值
更快的写入速度，GB/s

8.8 7.6

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor FLFE85F-C8KM9 2GB

SK Hynix HMA82GS6CJR8N-V-V 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 23
读取速度，GB/s

11.9 16.2
写入速度，GB/s

7.6 8.8
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

1610 2442

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP164U64CP6-Y5 512MB

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JUHOR JHD2666U1908JG 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

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Apacer Technology 78.CAGMR.40C0B 8GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Ramaxel Technology RMSA3270ME86H9F-2666 4GB

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Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB

Crucial Technology BLS8G4S240FSD.16FAR 8GB