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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB vs SK Hynix HMA82GS6DJR8N-VK 16GB

总分
star star star star star
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

总分
star star star star star
SK Hynix HMA82GS6DJR8N-VK 16GB

SK Hynix HMA82GS6DJR8N-VK 16GB

差异 规格 评论

差异

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB 需要考虑的原因
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 37
    左右 41% 更低的延时
SK Hynix HMA82GS6DJR8N-VK 16GB 需要考虑的原因
SK Hynix HMA82GS6DJR8N-VK 16GB
报告一个错误
  • 更快的写入速度，GB/s
    12.2 left arrow 10.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    22 left arrow 37
  • 读取速度，GB/s
    15.1 left arrow 15.1
  • 写入速度，GB/s
    10.0 left arrow 12.2
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2423 left arrow 2873

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB RAM的比较

Corsair CMZ16GX3M4X1866C9 4GB
Panram International Corporation PUD31600C118G2VS 8GB

SK Hynix HMA82GS6DJR8N-VK 16GB RAM的比较

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
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Samsung M378B5173BH0-CH9 4GB
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内存RAM
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内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
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G Skill Intl F4-2400C17-8GNT 8GB
内存RAM
Nanya Technology M2F4G64CB8HB9N-CG 4GB
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内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
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SK Hynix HMA82GU7AFR8N-UH 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
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Micron Technology 18ASF2G72PZ-2G3B1 16GB
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