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Samsung M471B5173QH0-YK0 4GB
Panram International Corporation PUD43000C158G2NJK 8GB

Samsung M471B5173QH0-YK0 4GB vs Panram International Corporation PUD43000C158G2NJK 8GB

总分
star star star star star
Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

总分
star star star star star
Panram International Corporation PUD43000C158G2NJK 8GB

Panram International Corporation PUD43000C158G2NJK 8GB

差异 规格 评论

差异

Samsung M471B5173QH0-YK0 4GB 需要考虑的原因
Samsung M471B5173QH0-YK0 4GB
报告一个错误
Panram International Corporation PUD43000C158G2NJK 8GB 需要考虑的原因
Panram International Corporation PUD43000C158G2NJK 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    19 left arrow 45
    左右 -137% 更低的延时
  • 更快的读取速度，GB/s
    19.8 left arrow 12.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M471B5173QH0-YK0 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    45 left arrow 19
  • 读取速度，GB/s
    12.3 left arrow 19.8
  • 写入速度，GB/s
    8.0 left arrow 15.0
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1992 left arrow 3370

Samsung M471B5173QH0-YK0 4GB RAM的比较

Crucial Technology CT51264BF160B.C16F 4GB
Crucial Technology CT51264BF160B.D16F 4GB

Panram International Corporation PUD43000C158G2NJK 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Golden Empire 1GB DDR2 800 CAS=4 1GB
G Skill Intl F4-2133C15-4GRR 4GB
G Skill Intl F4-2133C15-4GRR 4GB
内存RAM
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Samsung M471B1G73QH0-YK0 8GB
Apacer Technology D12.2326WH.001 16GB
Apacer Technology D12.2326WH.001 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Panram International Corporation PUD43000C158G2NJK 8GB
Panram International Corporation PUD43000C158G2NJK 8GB
内存RAM
Kingston HP669238-071-HYC 4GB
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A-DATA Technology VDQVE1B16 2GB
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内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
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A-DATA Technology DQKD1A08 1GB
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Hoodisk Electronics Co Ltd GKE800SO102408-2666A 8GB
内存RAM
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Samsung M378A1G43DB0-CPB 8GB
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内存RAM
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Gloway International (HK) STK4U2400D17082C 8GB
内存RAM
Kingston KVR16N11/8-SP 8GB
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Kingston 8ATF1G64AZ-2G3A141 8GB
内存RAM
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AMD AE34G1601U1 4GB
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内存RAM
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内存RAM
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Hynix Semiconductor (Hyundai Electronics) HMA41GS6AFR8N
内存RAM