Kingmax Semiconductor KLDD48F-B8KU5 1GB vs SK Hynix HMA851S6CJR6N-XN 4GB

总分

Kingmax Semiconductor KLDD48F-B8KU5 1GB

Kingmax Semiconductor KLDD48F-B8KU5 1GB

总分

SK Hynix HMA851S6CJR6N-XN 4GB

SK Hynix HMA851S6CJR6N-XN 4GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KU5 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KU5 1GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值

SK Hynix HMA851S6CJR6N-XN 4GB

需要考虑的原因
SK Hynix HMA851S6CJR6N-XN 4GB

报告一个错误

低于PassMark测试中的延时，ns

38 61

左右 -61% 更低的延时
更快的写入速度，GB/s

11.6 1,670.4

测试中的平均数值
更高的内存带宽，mbps

25600 6400

左右 4 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KU5 1GB

SK Hynix HMA851S6CJR6N-XN 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

61 38
读取速度，GB/s

3,529.3 15.1
写入速度，GB/s

1,670.4 11.6
内存带宽，mbps

6400 25600

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 800 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

517 2382

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMK16GX4M2B3733C17 8GB

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Samsung M3 78T2863EHS-CF7 1GB

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Crucial Technology CT51264BD1339.M16F 4GB

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Crucial Technology BL16G36C16U4W.M16FE1 16GB

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SK Hynix DDR2 800 2G 2GB

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Kingston ACR256X64D3S1333C9 2GB

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Corsair CMK16GX4M4B3866C18 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

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Kingston XJV223-MIE-NX 16GB

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Samsung M393A1G40DB0-CPB 8GB

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G Skill Intl F4-3000C16-16GSXWB 16GB

G Skill Intl F4-3000C16-16GSXWB 16GB

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Crucial Technology CT102464BA160B.M16 8GB

Kingston KHX4800C19D4/8GX 8GB

Kingston KHX4800C19D4/8GX 8GB