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Samsung M378B5173BH0-CH9 4GB
Transcend Information TS512MLH64V1H 4GB

Samsung M378B5173BH0-CH9 4GB vs Transcend Information TS512MLH64V1H 4GB

总分
star star star star star
Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

总分
star star star star star
Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

差异 规格 评论

差异

Samsung M378B5173BH0-CH9 4GB 需要考虑的原因
Samsung M378B5173BH0-CH9 4GB
报告一个错误
Transcend Information TS512MLH64V1H 4GB 需要考虑的原因
Transcend Information TS512MLH64V1H 4GB
报告一个错误
  • 更快的读取速度，GB/s
    16.4 left arrow 13.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
Samsung M378B5173BH0-CH9 4GB
Transcend Information TS512MLH64V1H 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    23 left arrow 23
  • 读取速度，GB/s
    13.4 left arrow 16.4
  • 写入速度，GB/s
    8.0 left arrow 11.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2269 left arrow 2575

Samsung M378B5173BH0-CH9 4GB RAM的比较

Kingston HX318C10FK/4 4GB
Apacer Technology D12.2755BS.001 16GB

Transcend Information TS512MLH64V1H 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Transcend Information TS512MLH64V1H 4GB
Transcend Information TS512MLH64V1H 4GB
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Elpida EBJ21UE8BDF0-DJ-F 2GB
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Avexir Technologies Corporation DDR4-2133 CL15 4GB 4GB
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内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMK16GX4M1E3200C16 16GB
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SpecTek Incorporated ?????????????????? 2GB
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Gold Key Technology Co Ltd NMUD480E85-3000D 8GB
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内存RAM