Kingmax Semiconductor KLDD48F-B8KW6 1GB vs Samsung M378T5663DZ3-CF7 2GB

总分

Kingmax Semiconductor KLDD48F-B8KW6 1GB

Kingmax Semiconductor KLDD48F-B8KW6 1GB

总分

Samsung M378T5663DZ3-CF7 2GB

Samsung M378T5663DZ3-CF7 2GB

差异规格评论

差异

Kingmax Semiconductor KLDD48F-B8KW6 1GB

需要考虑的原因
Kingmax Semiconductor KLDD48F-B8KW6 1GB

报告一个错误

Samsung M378T5663DZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663DZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

52 54

左右 -4% 更低的延时
更快的读取速度，GB/s

5 3

测试中的平均数值
更快的写入速度，GB/s

2,384.7 1,346.6

测试中的平均数值

规格

完整的技术规格清单

Kingmax Semiconductor KLDD48F-B8KW6 1GB

Samsung M378T5663DZ3-CF7 2GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

54 52
读取速度，GB/s

3,680.1 5,635.1
写入速度，GB/s

1,346.6 2,384.7
内存带宽，mbps

6400 6400

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 800 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

531 1037

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16JSF25664HZ-1G1F1 2GB

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G Skill Intl F4-4000C16-16GTRSA 16GB

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SK Hynix HMT325S6CFR8C-PB 2GB

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A-DATA Technology AO1P24HC4N2-BWCS 4GB

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SK Hynix HMT451S6BFR8A-PB 4GB

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G Skill Intl F4-3200C15-16GTZKO 16GB

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Kingston K531R8-MIN 4GB

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Apacer Technology AQD-SD4U4GN24-SG 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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Crucial Technology BL16G32C16U4B.M8FB1 16GB

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Kingston KHX1600C9D3/8G 8GB

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