Kingmax Semiconductor KSDD48F-B8KW5 1GB vs Micron Technology 16ATF1G64AZ-2G1B1 8GB

总分

Kingmax Semiconductor KSDD48F-B8KW5 1GB

Kingmax Semiconductor KSDD48F-B8KW5 1GB

总分

Micron Technology 16ATF1G64AZ-2G1B1 8GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Kingmax Semiconductor KSDD48F-B8KW5 1GB

需要考虑的原因
Kingmax Semiconductor KSDD48F-B8KW5 1GB

报告一个错误

更快的读取速度，GB/s

2 14.7

测试中的平均数值
更快的写入速度，GB/s

649.8 10.6

测试中的平均数值

Micron Technology 16ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 16ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

37 69

左右 -86% 更低的延时
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Kingmax Semiconductor KSDD48F-B8KW5 1GB

Micron Technology 16ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

69 37
读取速度，GB/s

2,050.0 14.7
写入速度，GB/s

649.8 10.6
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

274 2592

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFD8213.M16FB 8GB

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Corsair CM4X32GE2666C18S2 32GB

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SK Hynix HMA84GL7AMR4N-UH 32GB

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Crucial Technology CT16G4DFD8213.C16FDD 16GB

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Samsung M393B1G70BH0-CK0 8GB

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Corsair CM4X8GE2133C13K4 8GB

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SK Hynix HMT351U6CFR8C-H9 4GB

SK Hynix HMT351U6CFR8C-H9 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston CBD24D4S7D8MA-16 16GB

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SK Hynix HMA81GS6DJR8N-XN 8GB

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Samsung M471A1G44AB0-CWE 8GB

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Crucial Technology CT16G4DFRA32A.C16FP 16GB

Crucial Technology CT16G4DFRA32A.C16FP 16GB

Nanya Technology M2Y1G64TU8HB0B-25C 1GB

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Kingston 9965604-001.D00G 16GB

Kreton Corporation 51624xxxx68x35xxxx 2GB

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Maxsun MSD48G30Q3 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905668-001.A00G 8GB

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