Kingston 2GB-DDR2 800Mhz 2GB vs Crucial Technology BLT4G4D26AFTA.8FBD 4GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 16.5

测试中的平均数值
更快的写入速度，GB/s

2,160.7 12.9

测试中的平均数值

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

需要考虑的原因
Crucial Technology BLT4G4D26AFTA.8FBD 4GB

报告一个错误

低于PassMark测试中的延时，ns

23 43

左右 -87% 更低的延时
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Crucial Technology BLT4G4D26AFTA.8FBD 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 23
读取速度，GB/s

5,987.5 16.5
写入速度，GB/s

2,160.7 12.9
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

957 2709

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4DFD8213.C16FDR2 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

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G Skill Intl F4-3600C19-8GVRB 8GB

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TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMV16GX4M1A2666C18 16GB

Corsair CMV16GX4M1A2666C18 16GB

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Kingston K1N7HK-ELC 2GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4GB

Shanghai Kuxin Microelectronics Ltd NMUD440D82-2400E 4G