Kingston 2GB-DDR2 800Mhz 2GB vs Kingston MSI26D4S9S8ME-8 8GB

总分

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

总分

Kingston MSI26D4S9S8ME-8 8GB

Kingston MSI26D4S9S8ME-8 8GB

差异规格评论

差异

Kingston 2GB-DDR2 800Mhz 2GB

需要考虑的原因
Kingston 2GB-DDR2 800Mhz 2GB

报告一个错误

更快的读取速度，GB/s

5 15.8

测试中的平均数值
更快的写入速度，GB/s

2,160.7 12.6

测试中的平均数值

Kingston MSI26D4S9S8ME-8 8GB

需要考虑的原因
Kingston MSI26D4S9S8ME-8 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 43

左右 -19% 更低的延时
更高的内存带宽，mbps

21300 6400

左右 3.33 更高的带宽

规格

完整的技术规格清单

Kingston 2GB-DDR2 800Mhz 2GB

Kingston MSI26D4S9S8ME-8 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

43 36
读取速度，GB/s

5,987.5 15.8
写入速度，GB/s

2,160.7 12.6
内存带宽，mbps

6400 21300

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 800 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

957 2835

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2400C15Z8GNT 8GB

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G Skill Intl F3-17000CL9-4GBXLD 4GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

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G Skill Intl F3-2133C9-4GAB 4GB

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Crucial Technology BLS16G4D240FSE.16FBD 16GB

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Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB

Micron Technology 16ATF2G64HZ-2G6E1 16GB