Kingston 9905316-106.A02LF 1GB vs G Skill Intl F4-3200C22-8GRS 8GB

总分

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

总分

G Skill Intl F4-3200C22-8GRS 8GB

G Skill Intl F4-3200C22-8GRS 8GB

差异规格评论

差异

Kingston 9905316-106.A02LF 1GB

需要考虑的原因
Kingston 9905316-106.A02LF 1GB

报告一个错误

更快的读取速度，GB/s

4 16.2

测试中的平均数值
更快的写入速度，GB/s

2,475.5 13.3

测试中的平均数值

G Skill Intl F4-3200C22-8GRS 8GB

需要考虑的原因
G Skill Intl F4-3200C22-8GRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 56

左右 -47% 更低的延时
更高的内存带宽，mbps

25600 8800

左右 2.91 更高的带宽

规格

完整的技术规格清单

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-3200C22-8GRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 38
读取速度，GB/s

4,878.3 16.2
写入速度，GB/s

2,475.5 13.3
内存带宽，mbps

8800 25600

Other

描述

PC2-8800, SSTL 1.8V, CAS Supported: 5 6 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

no data 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

598 2944

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-3200C22-8GRS 8GB

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Samsung M378B5273CH0-CH9 4GB

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Kingston 9905700-011.A00G 8GB

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Crucial Technology CT25664AA800.M16FM 2GB

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Corsair CMR128GX4M8Z2933C16 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Crucial Technology CT8G4SFS824A.M8FA 8GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Kingston MSI24D4S7D8MB-16 16GB

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Samsung M3 78T5663RZ3-CE6 2GB

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Samsung M471A5244CB0-CWE 4GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

SK Hynix HMAA1GU6CJR6N-XN 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-4000C19-16GTZR 16GB

G Skill Intl F4-4000C19-16GTZR 16GB

Kingston 99U5474-023.A00LF 4GB

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Corsair CMK16GX4M2Z2933C16 8GB

Corsair CMK16GX4M2Z2933C16 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Kingston 9965596-019.B01G 4GB

Kingston 9965596-019.B01G 4GB