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Kingston 9905403-011.A03LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
比较
Kingston 9905403-011.A03LF 2GB vs Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
总分
Kingston 9905403-011.A03LF 2GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-011.A03LF 2GB
报告一个错误
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
27
左右 -8% 更低的延时
更快的读取速度,GB/s
15.3
13
测试中的平均数值
更快的写入速度,GB/s
12.7
8.0
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-011.A03LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
25
读取速度,GB/s
13.0
15.3
写入速度,GB/s
8.0
12.7
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
1976
2704
Kingston 9905403-011.A03LF 2GB RAM的比较
Kingston 99P5471-016.A00LF 8GB
Kingston 99P5429-006.A00Ls 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6AFR8N-VK 8GB RAM的比较
Kingston 99U5428-040.A00LF 4GB
AMD AE34G1601U1 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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Kingston 9965698-001.A00G 16GB
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Kingston 2GB-DDR2 800Mhz 2GB
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Samsung M471B5273CH0-CH9 4GB
Micron Technology 4ATF1G64HZ-3G2B2 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
I’M Intelligent Memory Ltd. PF4OUN-2400CH0-08G-A 8GB
报告一个错误
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Bug description
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