Samsung M471B5273CH0-CH9 4GB vs Micron Technology 4ATF1G64HZ-3G2B2 8GB

总分

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

总分

Micron Technology 4ATF1G64HZ-3G2B2 8GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

差异规格评论

差异

Samsung M471B5273CH0-CH9 4GB

需要考虑的原因
Samsung M471B5273CH0-CH9 4GB

报告一个错误

Micron Technology 4ATF1G64HZ-3G2B2 8GB

需要考虑的原因
Micron Technology 4ATF1G64HZ-3G2B2 8GB

报告一个错误

低于PassMark测试中的延时，ns

39 48

左右 -23% 更低的延时
更快的读取速度，GB/s

16.1 8.9

测试中的平均数值
更快的写入速度，GB/s

11.9 5.9

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M471B5273CH0-CH9 4GB

Micron Technology 4ATF1G64HZ-3G2B2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

48 39
读取速度，GB/s

8.9 16.1
写入速度，GB/s

5.9 11.9
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1420 2782

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Panram International Corporation PUD42133C154G2VS 4GB

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Samsung M386B4G70DM0-CMA4 32GB

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Corsair CMD64GX4M8B3200C16 8GB

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A-DATA Technology AD73I1B1672EG 2GB

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Terabyte Co Ltd RCX2-16G3000R 8GB

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Kingston KHX2133C11D3/4GX 4GB

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SK Hynix HMA82GU6CJR8N-VK 16GB

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A-DATA Technology DOVF1B163G2G 2GB

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Crucial Technology CT102464BF160B.C16 8GB

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InnoDisk Corporation M4C0-AGS1TCIK 16GB

InnoDisk Corporation M4C0-AGS1TCIK 16GB

Corsair CMX4GX3M1A1333C9 4GB

Corsair CMX4GX3M1A1333C9 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

Crucial Technology BLS4G4D240FSB.8FBD 4GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

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Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

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SK Hynix V-GeN D4H4GL26A8TL5 4GB

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Kingston KY7N41-MIE 8GB

Kingston KY7N41-MIE 8GB