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Kingston 9905403-061.A00LF 2GB
Crucial Technology BL8G26C16U4B.8FD 8GB

Kingston 9905403-061.A00LF 2GB vs Crucial Technology BL8G26C16U4B.8FD 8GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Crucial Technology BL8G26C16U4B.8FD 8GB 需要考虑的原因
Crucial Technology BL8G26C16U4B.8FD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 57
    左右 -104% 更低的延时
  • 更快的读取速度，GB/s
    17.3 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.7 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Crucial Technology BL8G26C16U4B.8FD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 28
  • 读取速度，GB/s
    6.8 left arrow 17.3
  • 写入速度，GB/s
    5.5 left arrow 13.7
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3359

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston 9905403-444.A00LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
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内存RAM
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SK Hynix HYMP512U64CP8-Y5 1GB
SK Hynix HYMP512U64CP8-Y5 1GB
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内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Corsair CM4B8G2J2400A14K 8GB
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Team Group Inc. Vulcan-1600 4GB
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AMD R744G2133U1S 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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Crucial Technology BLM16G40C18U4B.M8FB1 16GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Samsung M471A1G43EB1-CPB 8GB
Samsung M471A1G43EB1-CPB 8GB
内存RAM
Kingston KVR533D2N4 512MB
Kingston KVR533D2N4 512MB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N-TF 16GB
Hynix Semiconductor (Hyundai Electronics) HMA42GR7MFR4N
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
G Skill Intl F4-3600C16-8GTRG 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
G Skill Intl F4-3600C18-16GTRG 16GB
G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CMT32GX4M2C3000C15 16GB
Corsair CMT32GX4M2C3000C15 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Avant Technology W642GU42J2320NH 16GB
Avant Technology W642GU42J2320NH 16GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Transcend Information TS1GSH64V1H 8GB
Transcend Information TS1GSH64V1H 8GB
内存RAM