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Kingston 9905403-061.A00LF 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
比较
Kingston 9905403-061.A00LF 2GB vs Gloway International (HK) STKD4GAM2400-F 8GB
总分
Kingston 9905403-061.A00LF 2GB
总分
Gloway International (HK) STKD4GAM2400-F 8GB
差异
规格
评论
差异
需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
低于PassMark测试中的延时,ns
57
83
左右 31% 更低的延时
需要考虑的原因
Gloway International (HK) STKD4GAM2400-F 8GB
报告一个错误
更快的读取速度,GB/s
14.3
6.8
测试中的平均数值
更快的写入速度,GB/s
7.8
5.5
测试中的平均数值
更高的内存带宽,mbps
17000
10600
左右 1.6 更高的带宽
规格
完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
57
83
读取速度,GB/s
6.8
14.3
写入速度,GB/s
5.5
7.8
内存带宽,mbps
10600
17000
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度
7-7-7-20 / 1333 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
1244
1752
Kingston 9905403-061.A00LF 2GB RAM的比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB
Gloway International (HK) STKD4GAM2400-F 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK64GX5M2B5200C40 32GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Ramaxel Technology RMUA5110MH78HAF-2666 8GB
Kingston 9905403-061.A00LF 2GB
Gloway International (HK) STKD4GAM2400-F 8GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4DFD824A.C16FBD 16GB
Kingston 99U5584-004.A00LF 4GB
Corsair CMW16GX4M2D3600C18 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Kingston K9CXF2-MIE 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
G Skill Intl F4-3600C14-8GTZN 8GB
takeMS International AG TMS2GB264D082-805G 2GB
G Skill Intl F4-3600C17-16GTZKW 16GB
Samsung M3 78T3354BZ0-CCC 256MB
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZR 8GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMK16GX4M2A2800C16 8GB
Micron Technology 4ATF1G64HZ-3G2E2 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Samsung M378B5273DH0-CH9 4GB
Crucial Technology CT4G4SFS824A.M8FB 4GB
SK Hynix DDR2 800 2G 2GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GX2400S464L17S/8G-S1 8GB
报告一个错误
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Bug description
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