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Kingston 9905403-061.A00LF 2GB
Golden Empire CL16-16-16 D4-3000 4GB

Kingston 9905403-061.A00LF 2GB vs Golden Empire CL16-16-16 D4-3000 4GB

总分
star star star star star
Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

总分
star star star star star
Golden Empire CL16-16-16 D4-3000 4GB

Golden Empire CL16-16-16 D4-3000 4GB

差异 规格 评论

差异

Kingston 9905403-061.A00LF 2GB 需要考虑的原因
Kingston 9905403-061.A00LF 2GB
报告一个错误
Golden Empire CL16-16-16 D4-3000 4GB 需要考虑的原因
Golden Empire CL16-16-16 D4-3000 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 57
    左右 -97% 更低的延时
  • 更快的读取速度，GB/s
    16 left arrow 6.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 5.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Kingston 9905403-061.A00LF 2GB
Golden Empire CL16-16-16 D4-3000 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    57 left arrow 29
  • 读取速度，GB/s
    6.8 left arrow 16.0
  • 写入速度，GB/s
    5.5 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    1244 left arrow 3291

Kingston 9905403-061.A00LF 2GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Corsair CMX8GX3M1A1600C11 8GB

Golden Empire CL16-16-16 D4-3000 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M378B5773DH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Samsung M47472K43DB1-CTD 16GB
Samsung M47472K43DB1-CTD 16GB
内存RAM
Kingston 9905403-061.A00LF 2GB
Kingston 9905403-061.A00LF 2GB
Golden Empire CL16-16-16 D4-3000 4GB
Golden Empire CL16-16-16 D4-3000 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
Team Group Inc. TEAMGROUP-SD4-2666 16GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Samsung M378A2K43BB1-CRC 16GB
Samsung M378A2K43BB1-CRC 16GB
内存RAM
SK Hynix HMT451S6BFR8A-PB 4GB
SK Hynix HMT451S6BFR8A-PB 4GB
Corsair CMW32GX4M2Z2933C16 16GB
Corsair CMW32GX4M2Z2933C16 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
Crucial Technology CT16G4SFD8266.C16FE 16GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
Ramaxel Technology RMSA3310ME96HAF-3200 8GB
内存RAM
Elpida EBJ81UG8BBU0-GN-F 8GB
Elpida EBJ81UG8BBU0-GN-F 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
内存RAM
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK128GX4M4D3600C18 32GB
Corsair CMK128GX4M4D3600C18 32GB
内存RAM
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773CH0-CH9 2GB
Kingston 9905700-046.A00G 16GB
Kingston 9905700-046.A00G 16GB
内存RAM
Kingston HP698651-154-MCN 8GB
Kingston HP698651-154-MCN 8GB
Crucial Technology BL16G32C16S4B.16FE 16GB
Crucial Technology BL16G32C16S4B.16FE 16GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
Crucial Technology BLS4G4D240FSB.M8FADG 4GB
内存RAM